参数项参数值
参数项参数值
Gain Bandwidth Product fT120 MHz
Collector- Base Voltage VCBO- 180 V
ConfigurationSingle
Maximum DC Collector Current3 A
Collector- Emitter Voltage VCEO Max- 140 V
Continuous Collector Current- 3 A
Transistor PolarityPNP
TechnologySi
Emitter- Base Voltage VEBO7 V
Width2.6 mm
Height1.6 mm
Collector-Emitter Saturation Voltage- 255 mV
Length4.6 mm
MXHTS85412999
Factory Pack Quantity1000
CNHTS8541290000
KRHTS8541299000
BrandDiodes Incorporated
SubcategoryTransistors
Package / CaseSOT-89-3
Mounting StyleSMD/SMT
CAHTS8541290000
JPHTS8541290100
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingMouseReel
PackagingCut Tape
PackagingReel
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT 140V PNP Low Sat
ImageDiodes Incorporated ZXTP2014ZTA
SeriesZXTP2014
TARIC8541290000
ManufacturerDiodes Incorporated
Product CategoryBipolar Transistors - BJT
RoHS Details
Pd - Power Dissipation2100 mW
USHTS8541290075