参数项参数值
参数项参数值
ConfigurationSingle
Transistor PolarityN-Channel
Id - Continuous Drain Current16 A
Vgs th - Gate-Source Threshold Voltage4 V
TechnologySi
PackagingMouseReel
PackagingReel
PackagingCut Tape
CAHTS8541290000
Rds On - Drain-Source Resistance280 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time48 ns
Package / CaseTO-263-3
Vgs - Gate-Source Voltage- 30 V, + 30 V
KRHTS8541299000
ImageSTMicroelectronics STB23N80K5
BrandSTMicroelectronics
Typical Turn-On Delay Time14 ns
DescriptionMOSFET PTD HIGH VOLTAGE
Minimum Operating Temperature- 55 C
ManufacturerSTMicroelectronics
Factory Pack Quantity1000
TARIC8541290000
JPHTS8541290100
USHTS8541290095
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
RoHS Details
Qg - Gate Charge33 nC
Product CategoryMOSFET
MXHTS85412999
SubcategoryMOSFETs
Product TypeMOSFET
TradenameMDmesh
SeriesSTB23N80K5
Channel ModeEnhancement
Unit Weight0.067021 oz
Fall Time9 ns
CNHTS8541290000
Pd - Power Dissipation190 W
Vds - Drain-Source Breakdown Voltage800 V
Number of Channels1 Channel
Rise Time9 ns