参数项参数值
参数项参数值
Gain Bandwidth Product fT200 MHz
Collector- Base Voltage VCBO- 100 V
ConfigurationSingle
Maximum DC Collector Current- 1.5 A
Collector- Emitter Voltage VCEO Max- 80 V
Transistor PolarityPNP
TechnologySi
Width2.48 mm
Emitter- Base Voltage VEBO- 5 V
Length4.5 mm
CNHTS8541290000
Collector-Emitter Saturation Voltage- 1 V
Mounting StyleSMD/SMT
DC Collector/Base Gain hfe Min63 at - 5 mA, - 2 V
Height1.5 mm
Package / CaseSOT-89-3
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
MXHTS85412999
Minimum Operating Temperature- 55 C
JPHTS8541290100
CAHTS8541290000
PackagingReel
PackagingMouseReel
PackagingCut Tape
TARIC8541290000
Maximum Operating Temperature+ 150 C
RoHS Details
SubcategoryTransistors
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT 1000W -80Vceo
ImageDiodes Incorporated DCX53-16-13
Factory Pack Quantity2500
SeriesDCX53
Product CategoryBipolar Transistors - BJT
USHTS8541290095
Pd - Power Dissipation1000 mW