参数项参数值
参数项参数值
ConfigurationSingle
Transistor PolarityN-Channel
Id - Continuous Drain Current35 A
TechnologySi
JPHTS8541290100
ImageVishay Semiconductors SIS402DN-T1-GE3
KRHTS8541299000
Rds On - Drain-Source Resistance6 mOhms
Maximum Operating Temperature+ 150 C
Vgs - Gate-Source Voltage- 20 V, + 20 V
CAHTS8541290000
TARIC8541290000
Product CategoryMOSFET
Minimum Operating Temperature- 55 C
Factory Pack Quantity3000
SubcategoryMOSFETs
RoHS Details
Package / CasePowerPAK-1212-8
SeriesSIS
PackagingCut Tape
PackagingReel
PackagingMouseReel
DescriptionMOSFET 30V Vds 20V Vgs PowerPAK 1212-8
USHTS8541290095
Mounting StyleSMD/SMT
ManufacturerVishay
CNHTS8541290000
Product TypeMOSFET
BrandVishay Semiconductors
Qg - Gate Charge42 nC
MXHTS85412999
TradenameTrenchFET, PowerPAK
Channel ModeEnhancement
Part # AliasesSIJ484DP-T1-GE3
Pd - Power Dissipation52 W
Number of Channels1 Channel
Moisture Sensitivity Level1 (Unlimited)