SI1308EDL-T1-GE3

SI1308EDL-T1-GE3

厂牌：VISHAY(威世)

包装：REEL 1

类目：元器件 > 分立器件 > MOSFET

编号：B000053323744

描述：Trans MOSFET N-CH 30V 1.5A 3-Pin SC-70 T/RMOSFET 30V Vds 12V Vgs SC70-3 深圳

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商品参数

参数项参数值

参数项参数值

KRHTS8541219000

ConfigurationSingle

Forward Transconductance - Min5 s

Transistor PolarityN-Channel

Id - Continuous Drain Current1.5 A

Minimum Operating Temperature- 55 C

Vgs th - Gate-Source Threshold Voltage600 mV

TechnologySi

Length2.1 mm

Rds On - Drain-Source Resistance132 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time8 ns

Vgs - Gate-Source Voltage- 12 V, + 12 V

Height1.1 mm

Product CategoryMOSFET

JPHTS8541290100

Package / CaseSOT-323-3

RoHS Details

ManufacturerVishay

DescriptionMOSFET 30V Vds 12V Vgs SC70-3

MXHTS85412999

ImageVishay Semiconductors SI1308EDL-T1-GE3

CAHTS8541290000

Factory Pack Quantity3000

Maximum Operating Temperature+ 150 C

Width1.25 mm

TARIC8541290000

PackagingCut Tape

PackagingMouseReel

PackagingReel

BrandVishay Semiconductors

SubcategoryMOSFETs

Mounting StyleSMD/SMT

Qg - Gate Charge2.7 nC

Product TypeMOSFET

TradenameTrenchFET

SeriesSI1

Channel ModeEnhancement

USHTS8541210095

Unit Weight0.000176 oz

Fall Time8 ns

CNHTS8541210000

Part # AliasesSI1304BDL-T1-GE3 SI1300BDL-T1-GE3

Pd - Power Dissipation500 mW

Vds - Drain-Source Breakdown Voltage30 V

Number of Channels1 Channel

Rise Time9 ns

Moisture Sensitivity Level1 (Unlimited)