参数项参数值
参数项参数值
ConfigurationSingle
Id - Continuous Drain Current2.8 A
Transistor PolarityN-Channel
Vgs th - Gate-Source Threshold Voltage700 mV
TechnologySi
Rds On - Drain-Source Resistance75 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time34 us
Vgs - Gate-Source Voltage- 5 V, + 5 V
Package / CaseSOT-223-3
Typical Turn-On Delay Time8.6 us
Minimum Operating Temperature- 40 C
Mounting StyleSMD/SMT
PackagingReel
PackagingMouseReel
PackagingCut Tape
RoHS Details
ImageDiodes Incorporated ZXMS6006SGTA
MXHTS85412999
KRHTS8541299000
DescriptionMOSFET 60V N-CH INTELLIFET 100mOhm 2.8A 480mJ
ManufacturerDiodes Incorporated
CAHTS8541290000
Qg - Gate Charge-
JPHTS8541290100
Maximum Operating Temperature+ 125 C
TARIC8541290000
CNHTS8541290000
Channel ModeEnhancement
ProductMOSFET Small Signal
Factory Pack Quantity1000
Unit Weight0.003951 oz
SeriesZXMS600
SubcategoryMOSFETs
Fall Time15 uS
Product TypeMOSFET
BrandDiodes Incorporated
Product CategoryMOSFET
USHTS8541290095
Pd - Power Dissipation1.6 W
Vds - Drain-Source Breakdown Voltage60 V
TradenameIntelliFET
Number of Channels1 Channel
Rise Time18 us
Moisture Sensitivity Level1 (Unlimited)