参数项参数值
参数项参数值
ConfigurationSingle
Id - Continuous Drain Current8 A
Transistor PolarityN-Channel
TechnologySi
CAHTS8541290000
Factory Pack Quantity2500
Rds On - Drain-Source Resistance600 mOhms
Transistor Type1 N-Channel
Package / CaseTO-252-3
Vgs - Gate-Source Voltage- 25 V, + 25 V
KRHTS8541299000
ImageSTMicroelectronics STD10NM60ND
BrandSTMicroelectronics
DescriptionMOSFET N-Ch 600V 0.57 Ohm 8A FDmesh II PWR
Product TypeMOSFET
Minimum Operating Temperature- 55 C
ManufacturerSTMicroelectronics
JPHTS8541290100
TARIC8541210000
USHTS8541290095
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
RoHS Details
PackagingCut Tape
PackagingReel
PackagingMouseReel
Qg - Gate Charge19 nC
Product CategoryMOSFET
MXHTS85412101
SubcategoryMOSFETs
SeriesSTD10NM60ND
Channel ModeEnhancement
Unit Weight0.139332 oz
CNHTS8541290000
Pd - Power Dissipation70 W
Vds - Drain-Source Breakdown Voltage650 V
Number of Channels1 Channel