参数项参数值
参数项参数值
ConfigurationSingle
Id - Continuous Drain Current19.5 A
Transistor PolarityN-Channel
Vgs th - Gate-Source Threshold Voltage4 V
TechnologySi
CAHTS8541290000
JPHTS8541290100
Rds On - Drain-Source Resistance260 mOhms
Transistor Type1 N-Channel
Factory Pack Quantity1000
Package / CaseTO-263-3
ManufacturerSTMicroelectronics
Vgs - Gate-Source Voltage- 30 V, + 30 V
PackagingCut Tape
PackagingReel
PackagingMouseReel
BrandSTMicroelectronics
KRHTS8541299000
ImageSTMicroelectronics STB25N80K5
SubcategoryMOSFETs
DescriptionMOSFET N-Ch 800V 0.19 Ohm 19.5A MDmesh K5
TARIC8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
USHTS8541290095
Mounting StyleSMD/SMT
RoHS Details
Qg - Gate Charge40 nC
Product CategoryMOSFET
MXHTS85412999
Product TypeMOSFET
SeriesSTB25N80K5
TradenameMDmesh
Channel ModeEnhancement
Unit Weight0.139332 oz
CNHTS8541210000
Pd - Power Dissipation250 W
Vds - Drain-Source Breakdown Voltage800 V
Number of Channels1 Channel
Moisture Sensitivity Level1 (Unlimited)