参数项参数值
参数项参数值
DC Current Gain hFE Max200 at 10 mA, 2 V
Gain Bandwidth Product fT150 MHz
Collector- Base Voltage VCBO20 V
Maximum DC Collector Current4 A
Collector- Emitter Voltage VCEO Max20 V
TechnologySi
ConfigurationSingle
Transistor PolarityNPN
Collector-Emitter Saturation Voltage100 mV
Emitter- Base Voltage VEBO6 V
DC Collector/Base Gain hfe Min200 at 2 A, 2 V
Width1.3 mm
Length2.9 mm
Height1 mm
ImageDiodes Incorporated DSS20201L-7
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Package / CaseSOT-23-3
Minimum Operating Temperature- 55 C
PackagingMouseReel
PackagingReel
PackagingCut Tape
Unit Weight0.000282 oz
RoHS Details
Pd - Power Dissipation600 mW
SeriesDSS202
DescriptionBipolar Transistors - BJT LOW VCE(SAT) NPN SMT
BrandDiodes Incorporated
Product TypeBJTs - Bipolar Transistors
Factory Pack Quantity3000
SubcategoryTransistors
ManufacturerDiodes Incorporated
Product CategoryBipolar Transistors - BJT