参数项参数值
参数项参数值
ConfigurationDual
QualificationAEC-Q101
Transistor PolarityP-Channel
Id - Continuous Drain Current5.2 A
TechnologySi
KRHTS8541299000
Rds On - Drain-Source Resistance60 mOhms
Vgs - Gate-Source Voltage- 20 V, + 20 V
PackagingMouseReel
PackagingReel
PackagingCut Tape
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 175 C
MXHTS85412999
BrandDiodes Incorporated
Minimum Operating Temperature- 55 C
CNHTS8541290000
JPHTS8541290100
CAHTS8541290000
Package / CaseSO-8
Qg - Gate Charge14.5 nC
ManufacturerDiodes Incorporated
RoHS Details
TARIC8541290000
DescriptionMOSFET MOSFET BVDSS: 41V-60V
SubcategoryMOSFETs
ImageDiodes Incorporated DMPH6050SSDQ-13
Channel ModeEnhancement
Factory Pack Quantity2500
Product CategoryMOSFET
Product TypeMOSFET
Unit Weight0.002610 oz
USHTS8541210095
Pd - Power Dissipation2 W
Number of Channels2 Channel