参数项参数值
参数项参数值
ConfigurationSingle
Id - Continuous Drain Current78 A
Transistor PolarityN-Channel
Vgs th - Gate-Source Threshold Voltage1.8 V
TechnologySi
Height20.7 mm
Rds On - Drain-Source Resistance12 mOhms
Transistor Type1 N-Channel
Width5.31 mm
Vgs - Gate-Source Voltage- 30 V, + 30 V
MXHTS85412999
Package / CaseTO-247-3
Minimum Operating Temperature- 55 C
Length15.87 mm
PackagingTube
TARIC8541290000
KRHTS8541299000
JPHTS8541290100
CAHTS8541290000
Mounting StyleThrough Hole
Qg - Gate Charge110 nC
Maximum Operating Temperature+ 175 C
ImageInfineon / IR IRFP4321PBF
RoHS Details
Channel ModeEnhancement
CNHTS8541290000
Product CategoryMOSFET
BrandInfineon / IR
Unit Weight1.340411 oz
Product TypeMOSFET
Factory Pack Quantity400
DescriptionMOSFET MOSFT 150V 78A 15.5mOhm 71nC Qg
ManufacturerInfineon
SubcategoryMOSFETs
USHTS8541290095
Pd - Power Dissipation310 W
Vds - Drain-Source Breakdown Voltage150 V
Number of Channels1 Channel