参数项参数值
参数项参数值
Peak DC Collector Current100 mA
Collector- Emitter Voltage VCEO Max- 50 V
Continuous Collector Current- 100 mA
ConfigurationDual
Transistor PolarityPNP
DC Collector/Base Gain hfe Min68
Width1.2 mm
JPHTS8541290100
Height0.5 mm
Maximum Operating Temperature+ 150 C
MXHTS85412999
Length1.6 mm
TARIC8541290000
KRHTS8541299000
ManufacturerROHM Semiconductor
Package / CaseEMT-6
CNHTS8541290000
Mounting StyleSMD/SMT
CAHTS8541290000
Minimum Operating Temperature- 55 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
RoHS Details
ImageROHM Semiconductor EMB2T2R
BrandROHM Semiconductor
Pd - Power Dissipation150 mW
Factory Pack Quantity8000
Product TypeBJTs - Bipolar Transistors - Pre-Biased
Typical Input Resistor47 kOhms
Product CategoryBipolar Transistors - Pre-Biased
SubcategoryTransistors
DescriptionBipolar Transistors - Pre-Biased DUAL PNP 50V 30MA
USHTS8541290095