参数项参数值
参数项参数值
Forward Transconductance - Min450 ms
ConfigurationSingle
Id - Continuous Drain Current300 mA
Transistor PolarityN-Channel
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Height0.85 mm
Rds On - Drain-Source Resistance1 Ohms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time15 ns
Width1.24 mm
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time2.5 ns
MXHTS85412101
Package / CaseSOT-323-3
Minimum Operating Temperature- 55 C
Length2.1 mm
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541210000
KRHTS8541219000
JPHTS8541290100
CAHTS8541290000
Mounting StyleSMD/SMT
Qg - Gate Charge1.4 nC
Maximum Operating Temperature+ 150 C
RoHS Details
ProductMOSFET Small Signal
Channel ModeEnhancement
CNHTS8541210000
SubcategoryMOSFETs
Product CategoryMOSFET
BrandON Semiconductor
Unit Weight0.000219 oz
ManufacturerON Semiconductor
Fall Time0.8 ns
Factory Pack Quantity3000
DescriptionMOSFET 20V 300mA N-Channel
SeriesMMBF2201N
Product TypeMOSFET
USHTS8541210095
Pd - Power Dissipation150 mW
TypeMOSFET
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels1 Channel
Rise Time2.5 ns