参数项参数值
参数项参数值
DC Current Gain hFE Max300 at 100 mA, 1 V
Gain Bandwidth Product fT300 MHz
Collector- Base Voltage VCBO60 V
ConfigurationDual
Maximum DC Collector Current0.2 A
Collector- Emitter Voltage VCEO Max40 V
Continuous Collector Current0.2 A
Transistor PolarityNPN
TechnologySi
Emitter- Base Voltage VEBO6 V
Collector-Emitter Saturation Voltage0.3 V
Package / CaseSOT-963-6
PackagingReel
PackagingMouseReel
PackagingCut Tape
Mounting StyleSMD/SMT
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
RoHS Details
SubcategoryTransistors
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT 40V Dual NPN TRAN Ic 200mA 60V VCBO
ImageDiodes Incorporated DST3904DJ-7
Factory Pack Quantity10000
SeriesDST39
Product CategoryBipolar Transistors - BJT
Unit Weight1 oz
Pd - Power Dissipation300 mW