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SIB441EDK-T1-GE3

SIB441EDK-T1-GE3

厂牌：VISHAY(威世)
包装：REEL 1
类目：元器件 > 分立器件 > MOSFET
编号：B000053325347
描述：Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -9A; Idm: -40A
最新价格近期成交28单+
数量价格（含税）
1¥2.3445
100¥1.8889
750¥1.6778
1500¥1.5777
3000¥1.5110
库存：2,986交期：3-5Days起订：1增量：1
数量：
X
2.3445（单价）
合计：
￥2.34
商品满500包邮
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
Forward Transconductance - Min17 S
Id - Continuous Drain Current9 A
Transistor PolarityP-Channel
Vgs th - Gate-Source Threshold Voltage900 mV
TechnologySi
Width1.6 mm
Rds On - Drain-Source Resistance21 mOhms
Transistor Type1 P-Channel
Vgs - Gate-Source Voltage- 8 V, + 8 V
Length1.6 mm
Height0.75 mm
Typical Turn-On Delay Time22 ns
CNHTS8541290000
BrandVishay Semiconductors
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge33 nC
Package / CaseSC-75-6
JPHTS8541290100
Mounting StyleSMD/SMT
CAHTS8541290000
PackagingCut Tape
PackagingMouseReel
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
PackagingReel
Factory Pack Quantity3000
TARIC8541290000
Channel ModeEnhancement
Product CategoryMOSFET
RoHS Details
SeriesSIB
ManufacturerVishay
Product TypeMOSFET
DescriptionMOSFET -12V Vds 8V Vgs PowerPAK SC-75
Fall Time50 ns
ImageVishay Semiconductors SIB441EDK-T1-GE3
SubcategoryMOSFETs
Unit Weight0.003386 oz
USHTS8541290095
Pd - Power Dissipation13 W
TradenameTrenchFET, PowerPAK
Vds - Drain-Source Breakdown Voltage12 V
Number of Channels1 Channel
Rise Time42 ns