参数项参数值
参数项参数值
TechnologySi
ConfigurationSingle
Id - Continuous Drain Current3.7 A
Transistor PolarityN-Channel
Vgs th - Gate-Source Threshold Voltage2.5 V
Rds On - Drain-Source Resistance4.91 Ohms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time30 ns
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time7 ns
Width3.5 mm
Minimum Operating Temperature- 40 C
Height1.6 mm
CAHTS8541290000
MXHTS85412999
Maximum Operating Temperature+ 150 C
Length6.5 mm
KRHTS8541299000
Qg - Gate Charge6.7 nC
Mounting StyleSMD/SMT
JPHTS8541290100
Package / CaseSOT-223-3
Channel ModeEnhancement
CNHTS8541290000
Fall Time50 ns
PackagingReel
PackagingMouseReel
PackagingCut Tape
TARIC8541290000
RoHS Details
Unit Weight0.008818 oz
ImageInfineon Technologies IPN60R2K1CEATMA1
SeriesCoolMOS CE
Factory Pack Quantity3000
Pd - Power Dissipation5 W
Product TypeMOSFET
BrandInfineon Technologies
ManufacturerInfineon
SubcategoryMOSFETs
Part # AliasesIPN60R2K1CE SP001434886
Product CategoryMOSFET
DescriptionMOSFET CONSUMER
Vds - Drain-Source Breakdown Voltage600 V
USHTS8541290095
TradenameCoolMOS
Number of Channels1 Channel
Rise Time7 ns