参数项参数值
参数项参数值
Forward Transconductance - Min80 mS
TechnologySi
ConfigurationSingle
Id - Continuous Drain Current150 mA
Transistor PolarityP-Channel
Vgs th - Gate-Source Threshold Voltage2 V
Rds On - Drain-Source Resistance4.6 Ohms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time8.6 ns
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Typical Turn-On Delay Time6.7 ns
Width1.25 mm
Length2 mm
Height0.9 mm
JPHTS8541290100
MXHTS85412999
PackagingCut Tape
PackagingMouseReel
PackagingReel
Qg - Gate Charge1.5 nC
BrandInfineon Technologies
KRHTS8541299000
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
Package / CaseSOT-323-3
Minimum Operating Temperature- 55 C
CAHTS8541290000
Fall Time20.5 ns
CNHTS8541210000
TARIC8541290000
Unit Weight0.000176 oz
RoHS Details
Pd - Power Dissipation300 mW
SeriesBSS84
DescriptionMOSFET P-Ch -60V 150mA SOT-323-3
Part # AliasesBSS84PWH6327XT SP000917564 BSS84PWH6327XTSA1
ImageInfineon Technologies BSS84PW H6327
Factory Pack Quantity3000
Product TypeMOSFET
Product CategoryMOSFET
SubcategoryMOSFETs
ManufacturerInfineon
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time16.2 ns
USHTS8541290095