参数项参数值
参数项参数值
Forward Transconductance - Min190 S
TechnologySi
ConfigurationSingle
Id - Continuous Drain Current300 A
Transistor PolarityN-Channel
Vgs th - Gate-Source Threshold Voltage2.5 V
Rds On - Drain-Source Resistance760 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time227 ns
Vgs - Gate-Source Voltage- 20 V, + 20 V
MXHTS85412999
KRHTS8541299000
Typical Turn-On Delay Time54 ns
Factory Pack Quantity1500
Qg - Gate Charge86 nC
Package / CaseSO-8
CNHTS8541290000
JPHTS8541290100
Mounting StyleSMD/SMT
CAHTS8541290000
PackagingReel
PackagingCut Tape
PackagingMouseReel
Maximum Operating Temperature+ 175 C
Channel ModeEnhancement
Minimum Operating Temperature- 55 C
ImageON Semiconductor NTMFS5C410NT1G
TARIC8541290000
Fall Time173 ns
RoHS Details
ManufacturerON Semiconductor
Unit Weight0.003781 oz
BrandON Semiconductor
DescriptionMOSFET T6D3F 40V NFET
Product TypeMOSFET
Pd - Power Dissipation166 W
Product CategoryMOSFET
SubcategoryMOSFETs
USHTS8541290095
Vds - Drain-Source Breakdown Voltage40 V
Number of Channels1 Channel
Rise Time162 ns