SI3460DDV-T1-GE3

SI3460DDV-T1-GE3

厂牌：VISHAY(威世)

包装：REEL 1

类目：元器件 > 分立器件 > MOSFET

编号：B000053326333

描述：MOSFET N-CH D-S 20V 6-TSOP

商品参数

参数项参数值

参数项参数值

ConfigurationSingle

Id - Continuous Drain Current7.9 A

Transistor PolarityN-Channel

TechnologySi

Rds On - Drain-Source Resistance28 mOhms

Vgs - Gate-Source Voltage- 8 V, + 8 V

Height1.1 mm

Width1.65 mm

Length3.05 mm

Mounting StyleSMD/SMT

MXHTS85412101

CNHTS8541210000

KRHTS8541299000

Unit Weight0.000705 oz

Qg - Gate Charge18 nC

JPHTS8541210101

Package / CaseTSOP-6

CAHTS8541210000

PackagingReel

PackagingCut Tape

PackagingMouseReel

Maximum Operating Temperature+ 150 C

Minimum Operating Temperature- 55 C

SeriesSI3

Channel ModeEnhancement

Product TypeMOSFET

DescriptionMOSFET 20V Vds 8V Vgs TSOP-6

ManufacturerVishay

Factory Pack Quantity3000

BrandVishay Semiconductors

TARIC8541290000

ImageVishay Semiconductors SI3460DDV-T1-GE3

Product CategoryMOSFET

RoHS Details

SubcategoryMOSFETs

Pd - Power Dissipation2.7 W

USHTS8541290095

Part # AliasesSI3460DDV-GE3

TradenameTrenchFET

Number of Channels1 Channel