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商品参数
参数项参数值
参数项参数值
PackagingCut Tape (CT)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C4.6A (Ta), 41A (Tc)
Rds On (Max) @ Id, Vgs72mOhm @ 37A, 10V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id2V @ 5.55mA
Supplier Device PackagePG-TO263-3
Grade-
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)150 V
Gate Charge (Qg) (Max) @ Vgs224 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds11000 pF @ 75 V
Qualification-
Moisture Sensitivity Level1 (Unlimited)