STF12N50DM2

STF12N50DM2

厂牌：ST(意法半导体)

包装：TUBE 1

类目：元器件 > 分立器件 > MOSFET

编号：B000053326812

描述：N-channel 500 V, 0.299 Ohm typical, 11 A MDmesh DM2 power MOSFET, TO-220FP package

商品参数

参数项参数值

参数项参数值

Forward Transconductance - Min-

TechnologySi

ConfigurationSingle

Id - Continuous Drain Current11 A

Transistor PolarityN-Channel

Vgs th - Gate-Source Threshold Voltage4 V

Rds On - Drain-Source Resistance299 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time28 ns

Vgs - Gate-Source Voltage- 25 V, + 25 V

Typical Turn-On Delay Time12.5 ns

Development Kit-

Minimum Operating Temperature- 55 C

CAHTS8541290000

MXHTS85412999

KRHTS8541299000

Qg - Gate Charge120 nC

Product CategoryMOSFET

SubcategoryMOSFETs

JPHTS8541290100

Package / CaseTO-220-3

Channel ModeEnhancement

Mounting StyleThrough Hole

Maximum Operating Temperature+ 150 C

CNHTS8541290000

Fall Time9.8 ns

PackagingTube

TARIC8541290000

Unit Weight0.059613 oz

ImageSTMicroelectronics STF12N50DM2

SeriesSTF12N50DM2

Factory Pack Quantity1000

Product TypeMOSFET

Pd - Power Dissipation25 W

ManufacturerSTMicroelectronics

BrandSTMicroelectronics

DescriptionMOSFET PTD HIGH VOLTAGE

Vds - Drain-Source Breakdown Voltage500 V

TradenameMDmesh

USHTS8541290095

Number of Channels1 Channel

Rise Time9 ns