参数项参数值
参数项参数值
TechnologySi
ConfigurationSingle
Id - Continuous Drain Current36 A
Transistor PolarityN-Channel
Vgs th - Gate-Source Threshold Voltage3 V
Rds On - Drain-Source Resistance80 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time57 ns
Vgs - Gate-Source Voltage- 25 V, + 25 V
QualificationAEC-Q101
Typical Turn-On Delay Time23 ns
Qg - Gate Charge55 nC
CNHTS8541290000
USHTS8541290095
Minimum Operating Temperature- 55 C
Package / CaseD2PAK-3
Mounting StyleSMD/SMT
Channel ModeEnhancement
Maximum Operating Temperature+ 150 C
RoHS Details
PackagingCut Tape
PackagingReel
Fall Time9 ns
SeriesSTB47N60DM6AG
TARIC8541290000
BrandSTMicroelectronics
Unit Weight0.048678 oz
Factory Pack Quantity1000
Product TypeMOSFET
Product CategoryMOSFET
SubcategoryMOSFETs
Pd - Power Dissipation250 W
ManufacturerSTMicroelectronics
DescriptionMOSFET PTD HIGH VOLTAGE
Vds - Drain-Source Breakdown Voltage600 V
TradenameMDmesh
Number of Channels1 Channel
Rise Time5.5 ns