参数项参数值
参数项参数值
Forward Transconductance - Min150 mS
ConfigurationSingle
Id - Continuous Drain Current150 mA
Transistor PolarityN-Channel
Vgs th - Gate-Source Threshold Voltage800 mV
TechnologySi
Height1.02 mm
Rds On - Drain-Source Resistance5 Ohms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time4 ns
Width1.4 mm
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time3 ns
Package / CaseSOT-23-3
MXHTS85412101
Minimum Operating Temperature- 55 C
Length3.04 mm
TARIC8541210000
PackagingCut Tape
PackagingMouseReel
PackagingReel
KRHTS8541219000
RoHS Details
JPHTS8541210101
CAHTS8541210000
Mounting StyleSMD/SMT
Qg - Gate Charge-
Maximum Operating Temperature+ 150 C
ImageDiodes Incorporated ZVN3306FTA
ProductMOSFET Small Signal
Channel ModeEnhancement
CNHTS8541210000
Product CategoryMOSFET
BrandDiodes Incorporated
Unit Weight0.000282 oz
Fall Time5 ns
Product TypeMOSFET
SeriesZVN3306
Factory Pack Quantity3000
SubcategoryMOSFETs
DescriptionMOSFET N-Chnl 60V
ManufacturerDiodes Incorporated
USHTS8541210095
Pd - Power Dissipation330 mW
TypeFET
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time4 ns
Moisture Sensitivity Level1 (Unlimited)