参数项参数值
参数项参数值
PackagingCut Tape (CT)
Package / Case8-WDFN Exposed Pad
Mounting TypeSurface Mount
Configuration2 N-Channel (Dual)
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max2.5W
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C13A, 15A
Input Capacitance (Ciss) (Max) @ Vds485pF @ 15V
Rds On (Max) @ Id, Vgs10.2mOhm @ 13A, 10V
Gate Charge (Qg) (Max) @ Vgs11nC @ 10V
FET FeatureLogic Level Gate
Vgs(th) (Max) @ Id2.2V @ 250µA
Supplier Device Package8-DFN-EP (3x3)
Moisture Sensitivity Level1 (Unlimited)