参数项参数值
参数项参数值
Forward Transconductance - Min17 S
ConfigurationSingle
Id - Continuous Drain Current29 A
Transistor PolarityN-Channel
Vgs th - Gate-Source Threshold Voltage2.35 V
TechnologySi
Height1 mm
Rds On - Drain-Source Resistance17.9 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time9.9 ns
Width5 mm
Vgs - Gate-Source Voltage- 20 V, + 20 V
Package / CasePQFN-8
Typical Turn-On Delay Time9 ns
Mounting StyleSMD/SMT
Minimum Operating Temperature- 55 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
RoHS Details
ImageInfineon / IR IRFH3707TRPBF
MXHTS85412999
Length6 mm
KRHTS8541299000
DescriptionMOSFET 30V 1 N-CH HEXFET 12.4mOhms 5.4nC
JPHTS8541290100
CAHTS8541290000
Qg - Gate Charge5.4 nC
ManufacturerInfineon
Maximum Operating Temperature+ 150 C
TARIC8541290000
CNHTS8541290000
Channel ModeEnhancement
Factory Pack Quantity4000
Unit Weight0.013044 oz
SubcategoryMOSFETs
Fall Time5.6 ns
BrandInfineon / IR
Product TypeMOSFET
Product CategoryMOSFET
USHTS8541290095
Pd - Power Dissipation2.8 W
TypeHEXFET Power MOSFET
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time11 ns