参数项参数值
参数项参数值
ConfigurationSingle
Forward Transconductance - Min3.2 S
Transistor PolarityN-Channel
Id - Continuous Drain Current2.1 A
Vgs th - Gate-Source Threshold Voltage850 mV
TechnologySi
MXHTS85412101
Rds On - Drain-Source Resistance180 mOhms
Transistor Type1 N-Channel
Height0.35 mm
Typical Turn-Off Delay Time11 ns
KRHTS8541299000
Vgs - Gate-Source Voltage- 8 V, + 8 V
Factory Pack Quantity250
Typical Turn-On Delay Time3.7 ns
Length1 mm
Width0.64 mm
PackagingCut Tape
PackagingMouseReel
PackagingReel
JPHTS8542390990
Minimum Operating Temperature- 55 C
CAHTS8541290000
CNHTS8541210000
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Qg - Gate Charge1.06 nC
ImageTexas Instruments CSD13381F4T
BrandTexas Instruments
Product TypeMOSFET
TARIC8541210000
DescriptionMOSFET 12V,N-Ch FemtoFET MOSFET
RoHS Details
Product CategoryMOSFET
SeriesCSD13381F4
Channel ModeEnhancement
ManufacturerTexas Instruments
SubcategoryMOSFETs
Unit Weight0.000014 oz
USHTS8541290095
Fall Time3.8 ns
Pd - Power Dissipation500 mW
Vds - Drain-Source Breakdown Voltage12 V
Number of Channels1 Channel
Rise Time1.5 ns