IPD088N06N3G

IPD088N06N3G

厂牌：Infineon(英飞凌)

包装：REEL 1

类目：元器件 > 分立器件 > MOSFET

编号：B000053332664

描述：MOSFET N-CH 60V 50A TO252-3

商品参数

参数项参数值

参数项参数值

TechnologySi

ConfigurationSingle

Id - Continuous Drain Current50 A

Transistor PolarityN-Channel

Vgs th - Gate-Source Threshold Voltage3 V

Rds On - Drain-Source Resistance8.8 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time20 ns

Width6.22 mm

Vgs - Gate-Source Voltage- 20 V, + 20 V

Typical Turn-On Delay Time15 ns

Height2.3 mm

Length6.5 mm

RoHS Details

Qg - Gate Charge48 nC

ImageInfineon Technologies IPD088N06N3 G

Package / CaseTO-252-3

Mounting StyleSMD/SMT

Maximum Operating Temperature+ 175 C

Minimum Operating Temperature- 55 C

Channel ModeEnhancement

SeriesOptiMOS 3

Fall Time5 ns

PackagingMouseReel

PackagingReel

PackagingCut Tape

BrandInfineon Technologies

Factory Pack Quantity2500

SubcategoryMOSFETs

Product CategoryMOSFET

Unit Weight0.139332 oz

Product TypeMOSFET

ManufacturerInfineon

Pd - Power Dissipation71 W

Part # AliasesIPD88N6N3GXT SP000453620 IPD088N06N3GBTMA1

DescriptionMOSFET N-Ch 60V 50A DPAK-2 OptiMOS 3

Vds - Drain-Source Breakdown Voltage60 V

TradenameOptiMOS

Number of Channels1 Channel

Rise Time40 ns