参数项参数值
参数项参数值
Forward Transconductance - Min136 S
ConfigurationSingle
Id - Continuous Drain Current136 A
Transistor PolarityN-Channel
Vgs th - Gate-Source Threshold Voltage1.3 V
TechnologySi
Rds On - Drain-Source Resistance1.5 MOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time27 ns
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time14 ns
MXHTS85412999
ImageON Semiconductor NTMFS4C03NT1G
TARIC8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
RoHS Details
KRHTS8541299000
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Package / CaseSO-8
Channel ModeEnhancement
CNHTS8541290000
BrandON Semiconductor
Product TypeMOSFET
Unit Weight0.003781 oz
Fall Time17 ns
SubcategoryMOSFETs
Factory Pack Quantity1500
Product CategoryMOSFET
ManufacturerON Semiconductor
DescriptionMOSFET NFET SO8FL 30V 138A 2.1MO
USHTS8541290095
Pd - Power Dissipation64 W
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time32 ns