参数项参数值
参数项参数值
ConfigurationSingle
Id - Continuous Drain Current5 A
Transistor PolarityN-Channel
Vgs th - Gate-Source Threshold Voltage3 V
TechnologySi
Rds On - Drain-Source Resistance900 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time22.5 ns
Vgs - Gate-Source Voltage- 25 V, + 25 V
Typical Turn-On Delay Time7.5 ns
CNHTS8541290000
BrandSTMicroelectronics
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge10 nC
JPHTS8541290100
Package / CaseTO-252-3
Mounting StyleSMD/SMT
CAHTS8541290000
ProductPower MOSFETs
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingMouseReel
Factory Pack Quantity2500
PackagingCut Tape
PackagingReel
ManufacturerSTMicroelectronics
Channel ModeEnhancement
SeriesSTD9N65M2
TARIC8541290000
Product CategoryMOSFET
RoHS Details
DescriptionMOSFET PTD HIGH VOLTAGE
ImageSTMicroelectronics STD9N65M2
Fall Time18 ns
Product TypeMOSFET
SubcategoryMOSFETs
Unit Weight0.139332 oz
Pd - Power Dissipation60 W
USHTS8541290095
TradenameMDmesh
Vds - Drain-Source Breakdown Voltage650 V
Number of Channels1 Channel
Rise Time6.6 ns