在线商城 
IPP110N20N3G
厂牌：Infineon(英飞凌)
包装：TUBE 1
类目：元器件 > 分立器件 > MOSFET
编号：B000053346147
描述：MOSFET N-CH 200V 88A TO220-3
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min71 S
TechnologySi
ConfigurationSingle
Id - Continuous Drain Current88 A
Transistor PolarityN-Channel
Vgs th - Gate-Source Threshold Voltage2 V
Rds On - Drain-Source Resistance9.9 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time41 ns
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time18 ns
CAHTS8541290000
Height15.65 mm
Minimum Operating Temperature- 55 C
Width4.4 mm
Length10 mm
Maximum Operating Temperature+ 175 C
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge87 nC
SubcategoryMOSFETs
Product CategoryMOSFET
JPHTS8541290100
Package / CaseTO-220-3
Channel ModeEnhancement
Mounting StyleThrough Hole
CNHTS8541290000
Fall Time11 ns
PackagingTube
RoHS Details
TARIC8541290000
ImageInfineon Technologies IPP110N20N3 G
Unit Weight0.211644 oz
SeriesOptiMOS 3
Factory Pack Quantity500
Pd - Power Dissipation300 W
Product TypeMOSFET
DescriptionMOSFET N-Ch 200V 88A TO220-3 OptiMOS 3
ManufacturerInfineon
BrandInfineon Technologies
Part # AliasesIPP11N2N3GXK SP000677892 IPP110N20N3GXKSA1
Vds - Drain-Source Breakdown Voltage200 V
TradenameOptiMOS
USHTS8541290095
Number of Channels1 Channel
Rise Time26 ns