参数项参数值
参数项参数值
DC Current Gain hFE Max450 at 2 mA, 5 V
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO50 V
Maximum DC Collector Current100 mA
Collector- Emitter Voltage VCEO Max45 V
TechnologySi
ConfigurationDual
Transistor PolarityNPN
Collector-Emitter Saturation Voltage0.6 V
Emitter- Base Voltage VEBO6 V
DC Collector/Base Gain hfe Min200 at 2 mA, 5 V
QualificationAEC-Q101
PackagingReel
PackagingCut Tape
PackagingMouseReel
ImageON Semiconductor SBC847BDW1T1G
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Package / CaseSOT-363-6
Minimum Operating Temperature- 55 C
Unit Weight0.000265 oz
Pd - Power Dissipation380 mW
SeriesBC847BDW1
DescriptionBipolar Transistors - BJT SS GP XSTR NPN 45V
BrandON Semiconductor
ManufacturerON Semiconductor
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
Factory Pack Quantity3000
Product CategoryBipolar Transistors - BJT
Moisture Sensitivity Level1 (Unlimited)