参数项参数值
参数项参数值
ConfigurationSingle
Transistor PolarityN-Channel
Id - Continuous Drain Current6 A
TechnologySi
Vgs th - Gate-Source Threshold Voltage4 V
JPHTS8541290100
ImageSTMicroelectronics STD8N80K5
KRHTS8541299000
Rds On - Drain-Source Resistance950 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time32 ns
Maximum Operating Temperature+ 150 C
Vgs - Gate-Source Voltage- 30 V, + 30 V
CAHTS8541290000
Product CategoryMOSFET
TARIC8541290000
Minimum Operating Temperature- 55 C
Factory Pack Quantity2500
ManufacturerSTMicroelectronics
Typical Turn-On Delay Time12 ns
SubcategoryMOSFETs
Package / CaseTO-252-3
SeriesSTD8N80K5
PackagingMouseReel
PackagingReel
PackagingCut Tape
DescriptionMOSFET N-Ch 800V 0.76 Ohm 6A MDmesh K5
USHTS8541290095
Mounting StyleSMD/SMT
CNHTS8541290000
Product TypeMOSFET
RoHS Details
BrandSTMicroelectronics
Qg - Gate Charge16.5 nC
MXHTS85412999
TradenameMDmesh
Channel ModeEnhancement
Fall Time20 ns
Unit Weight0.139332 oz
Pd - Power Dissipation110 W
Vds - Drain-Source Breakdown Voltage800 V
Number of Channels1 Channel
Rise Time14 ns