参数项参数值
参数项参数值
ConfigurationSingle
Id - Continuous Drain Current160 A
Transistor PolarityN-Channel
Vgs th - Gate-Source Threshold Voltage1.5 V
TechnologySi
BrandToshiba
Rds On - Drain-Source Resistance1.9 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time39 ns
Package / CaseSOP-8
Length5 mm
CAHTS8541290000
Height0.95 mm
Minimum Operating Temperature- 55 C
Vgs - Gate-Source Voltage- 20 V, + 20 V
JPHTS8541290100
ManufacturerToshiba
KRHTS8541299000
Typical Turn-On Delay Time16 ns
PackagingMouseReel
PackagingReel
PackagingCut Tape
TARIC8541290000
Factory Pack Quantity5000
DescriptionMOSFET N-Ch 60V 4180pF 60nC 160A 132W
Maximum Operating Temperature+ 175 C
USHTS8541290095
Mounting StyleSMD/SMT
Width5 mm
RoHS Details
ImageToshiba TPH2R506PL,L1Q
Qg - Gate Charge60 nC
SubcategoryMOSFETs
Product TypeMOSFET
MXHTS85412999
Product CategoryMOSFET
Channel ModeEnhancement
Unit Weight0.002787 oz
Fall Time13 ns
CNHTS8541290000
Pd - Power Dissipation132 W
TradenameU-MOSIX-H
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time7.1 ns