参数项参数值
参数项参数值
ConfigurationSingle
QualificationAEC-Q101
Id - Continuous Drain Current30 A
Transistor PolarityN-Channel
TechnologySi
Height4.6 mm
Rds On - Drain-Source Resistance40 mOhms
Transistor Type1 N-Channel
Maximum Operating Temperature+ 175 C
Typical Turn-Off Delay Time19 ns
Length10.4 mm
Minimum Operating Temperature- 55 C
BrandSTMicroelectronics
Package / CaseTO-263-3
Vgs - Gate-Source Voltage- 18 V, + 18 V
CAHTS8541290000
ManufacturerSTMicroelectronics
SubcategoryMOSFETs
PackagingCut Tape
PackagingReel
PackagingMouseReel
Typical Turn-On Delay Time10 ns
RoHS Details
Factory Pack Quantity1000
DescriptionMOSFET 60V 0.032Ohm 30A N-Channel
USHTS8541290075
TARIC8541210000
Mounting StyleSMD/SMT
Product TypeMOSFET
ImageSTMicroelectronics STB36NF06LT4
Qg - Gate Charge17 nC
MXHTS85412101
Product CategoryMOSFET
SeriesSTB36NF06LT4
Channel ModeEnhancement
Unit Weight0.139332 oz
Fall Time13 ns
CNHTS8541210000
Pd - Power Dissipation70 W
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time80 ns