参数项参数值
参数项参数值
DC Current Gain hFE Max200
BrandToshiba
ConfigurationSingle
Collector- Base Voltage VCBO900 V
Maximum DC Collector Current2 A
Collector- Emitter Voltage VCEO Max800 V
Continuous Collector Current1 A
Transistor PolarityNPN
PackagingCut Tape
PackagingReel
PackagingMouseReel
Emitter- Base Voltage VEBO8 V
Maximum Operating Temperature+ 150 C
ManufacturerToshiba
Factory Pack Quantity2000
TARIC8541210000
Collector-Emitter Saturation Voltage1 V
Minimum Operating Temperature- 55 C
RoHS Details
DC Collector/Base Gain hfe Min100
ImageToshiba TTC014,L1NV
Product CategoryBipolar Transistors - BJT
Package / Case2-7J1A-3
Product TypeBJTs - Bipolar Transistors
SeriesTTC014
Mounting StyleSMD/SMT
SubcategoryTransistors
DescriptionBipolar Transistors - BJT PWR MOS TRANS PC=40W NEW PW-MO
USHTS8541290095
Pd - Power Dissipation1 W