参数项参数值
参数项参数值
ConfigurationSingle
Forward Transconductance - Min14 S
Id - Continuous Drain Current17 A
Transistor PolarityN-Channel
TechnologySi
Rds On - Drain-Source Resistance140 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time21 ns
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Typical Turn-On Delay Time8.8 ns
CNHTS8541210000
BrandSTMicroelectronics
MXHTS85412101
KRHTS8541299000
Qg - Gate Charge29.3 nC
JPHTS8541290100
Package / CaseTO-263-3
Mounting StyleSMD/SMT
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
PackagingCut Tape
PackagingReel
PackagingMouseReel
Factory Pack Quantity1000
ManufacturerSTMicroelectronics
Channel ModeEnhancement
SeriesSTB18NF25
TARIC8541210000
Product CategoryMOSFET
RoHS Details
DescriptionMOSFET N-Ch 250 V .14 ohm 17A STripFET II
Fall Time8.8 ns
ImageSTMicroelectronics STB18NF25
Product TypeMOSFET
SubcategoryMOSFETs
Unit Weight0.139332 oz
Pd - Power Dissipation110 W
USHTS8541290095
TypeSTripFET II Power MOSFET
TradenameSTripFET
Vds - Drain-Source Breakdown Voltage250 V
Number of Channels1 Channel
Rise Time17.2 ns