CSD17311Q5

CSD17311Q5

厂牌：TI(德州仪器)

包装：REEL 1

类目：元器件 > 分立器件 > MOSFET

编号：B000053357946

描述：MOSFET 30V N-Channel NexFET Power MOSFET

商品参数

参数项参数值

参数项参数值

CNHTS8541290000

ConfigurationSingle

Forward Transconductance - Min200 s

Width5 mm

Id - Continuous Drain Current100 A

Transistor PolarityN-Channel

Vgs th - Gate-Source Threshold Voltage1.2 V

TechnologySi

Rds On - Drain-Source Resistance2.3 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time33 ns

MXHTS85423999

Vgs - Gate-Source Voltage- 8 V, + 10 V

Length6 mm

Mounting StyleSMD/SMT

PackagingCut Tape

PackagingMouseReel

PackagingReel

Typical Turn-On Delay Time12 ns

Height1 mm

Package / CaseVSON-CLIP-8

Product CategoryMOSFET

KRHTS8541299000

Product TypeMOSFET

DescriptionMOSFET 30V N-Channel NexFET Power MOSFET

Maximum Operating Temperature+ 150 C

JPHTS8541290100

CAHTS8541290000

Minimum Operating Temperature- 55 C

Qg - Gate Charge24 nC

TARIC8542399000

ManufacturerTexas Instruments

Factory Pack Quantity2500

SubcategoryMOSFETs

SeriesCSD17311Q5

RoHS Details

BrandTexas Instruments

Channel ModeEnhancement

ImageTexas Instruments CSD17311Q5

USHTS8541290095

Fall Time12 ns

Unit Weight0.008818 oz

Pd - Power Dissipation3.2 W

Type30V N-Channel NexFET Power MOSFET

TradenameNexFET

Vds - Drain-Source Breakdown Voltage30 V

Number of Channels1 Channel

Rise Time18 ns