参数项参数值
参数项参数值
TechnologySi
ConfigurationDual
Id - Continuous Drain Current0.51 A, - 0.34 A
Transistor PolarityN-Channel, P-Channel
Rds On - Drain-Source Resistance1 Ohms
Transistor Type1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time14 ns, 8 ns
MXHTS85412101
Vgs - Gate-Source Voltage- 20 V, + 20 V
Width1.6 mm
KRHTS8541299000
Typical Turn-On Delay Time2.8 ns, 3.2 ns
Height1.1 mm
Length2.9 mm
Qg - Gate Charge1.5 nC, 2.2 nC
Package / CaseSSOT-6
CNHTS8541210000
ProductMOSFET Small Signal
JPHTS8541210101
CAHTS8541210000
Mounting StyleSMD/SMT
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageON Semiconductor / Fairchild NDC7001C
TARIC8541210000
RoHS Details
Factory Pack Quantity3000
SeriesNDC7001C
BrandON Semiconductor / Fairchild
Unit Weight0.001058 oz
ManufacturerON Semiconductor
DescriptionMOSFET Dual N/P Channel FET Enhancement Mode
Product TypeMOSFET
Product CategoryMOSFET
Pd - Power Dissipation960 mW
Part # AliasesNDC7001C_NL
SubcategoryMOSFETs
USHTS8541290095
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels2 Channel