参数项参数值
参数项参数值
TechnologySi
ConfigurationSingle
Id - Continuous Drain Current36 A
Transistor PolarityN-Channel
Vgs th - Gate-Source Threshold Voltage2 V
Rds On - Drain-Source Resistance19 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time12.1 ns
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time7.85 ns
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CAHTS8541290000
MXHTS85412999
Qg - Gate Charge8 nC
KRHTS8541299000
SubcategoryMOSFETs
JPHTS8541290100
Package / CasePowerFLAT-3.3x3.3-8
Channel ModeEnhancement
Mounting StyleSMD/SMT
CNHTS8541290000
PackagingCut Tape
PackagingReel
Fall Time3.95 ns
TARIC8541290000
Unit Weight0.000705 oz
SeriesSTL8N6F7
BrandSTMicroelectronics
Pd - Power Dissipation60 W
Factory Pack Quantity3000
Product TypeMOSFET
Product CategoryMOSFET
ManufacturerSTMicroelectronics
DescriptionMOSFET LGS LV MOSFET
Vds - Drain-Source Breakdown Voltage60 V
USHTS8541290095
TradenameSTripFET
Number of Channels1 Channel
Rise Time3.25 ns