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STH315N10F7-2
厂牌：ST(意法半导体)
包装：REEL 1
类目：元器件 > 分立器件 > MOSFET
编号：B000053358501
描述：STH315N10F7 Series 100 V 180 A 2.3 mOhm N-Ch STripFET™ F7 Power Mosfet - H PAK-2
商品参数
参数项参数值
参数项参数值
TechnologySi
ConfigurationSingle
Id - Continuous Drain Current180 A
Transistor PolarityN-Channel
Vgs th - Gate-Source Threshold Voltage3.5 V
Rds On - Drain-Source Resistance2.3 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time148 ns
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Typical Turn-On Delay Time62 ns
Minimum Operating Temperature- 55 C
CAHTS8541290000
MXHTS85412999
Qg - Gate Charge180 nC
KRHTS8541299000
SubcategoryMOSFETs
JPHTS8541290100
Package / CaseH2PAK-2
Mounting StyleSMD/SMT
CNHTS8541290000
Maximum Operating Temperature+ 175 C
PackagingMouseReel
PackagingReel
PackagingCut Tape
Fall Time40 ns
TARIC8541290000
Unit Weight0.139332 oz
ImageSTMicroelectronics STH315N10F7-2
BrandSTMicroelectronics
Pd - Power Dissipation315 W
Factory Pack Quantity1000
SeriesSTH315N10F7-2
Product TypeMOSFET
ManufacturerSTMicroelectronics
Product CategoryMOSFET
DescriptionMOSFET LGS LV MOSFET
Vds - Drain-Source Breakdown Voltage100 V
USHTS8541290095
TradenameSTripFET
Number of Channels1 Channel
Rise Time108 ns
Moisture Sensitivity Level1 (Unlimited)