参数项参数值
参数项参数值
TechnologySi
ConfigurationSingle
Id - Continuous Drain Current7.5 A
Vgs th - Gate-Source Threshold Voltage1.8 V
Transistor PolarityN-Channel
Rds On - Drain-Source Resistance35 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time7.3 ns
Vgs - Gate-Source Voltage- 20 V, + 20 V
MXHTS85412999
Typical Turn-On Delay Time16 ns
Width2 mm
KRHTS8541299000
Height0.75 mm
Length2 mm
Minimum Operating Temperature- 55 C
CAHTS8541290000
Qg - Gate Charge12 nC
Product TypeMOSFET
Maximum Operating Temperature+ 150 C
Package / CaseMicroFET-6
Channel ModeEnhancement
Mounting StyleSMD/SMT
JPHTS8541290100
PackagingReel
PackagingCut Tape
PackagingMouseReel
CNHTS8541290000
Fall Time1.4 ns
TARIC8541290000
BrandON Semiconductor / Fairchild
SeriesFDMA86551L
Unit Weight0.001058 oz
RoHS Details
Factory Pack Quantity3000
ImageON Semiconductor / Fairchild FDMA86551L
Product CategoryMOSFET
Pd - Power Dissipation2.4 W
ManufacturerON Semiconductor
SubcategoryMOSFETs
USHTS8541290095
Vds - Drain-Source Breakdown Voltage60 V
TradenamePowerTrench
DescriptionMOSFET 60V Single N-Channel PowerTrench MOSFET
Number of Channels1 Channel
Rise Time1.7 ns