参数项参数值
参数项参数值
ConfigurationSingle
Id - Continuous Drain Current11.5 A
Transistor PolarityN-Channel
Vgs th - Gate-Source Threshold Voltage4 V
TechnologySi
Rds On - Drain-Source Resistance290 mOhms
Minimum Operating Temperature- 55 C
Transistor Type1 N-Channel
Typical Turn-Off Delay Time170 ns
Package / CaseDPAK-3
CAHTS8541290000
JPHTS8541290100
Vgs - Gate-Source Voltage- 30 V, + 30 V
ManufacturerToshiba
BrandToshiba
PackagingCut Tape
PackagingReel
KRHTS8541299000
Product CategoryMOSFET
Typical Turn-On Delay Time65 ns
TARIC8541290000
DescriptionMOSFET N-Ch DTMOSV 650V 100W 730pF 11.5A
Maximum Operating Temperature+ 150 C
Factory Pack Quantity2000
USHTS8541290095
Mounting StyleSMD/SMT
RoHS Details
ImageToshiba TK290P65Y,RQ
SubcategoryMOSFETs
Qg - Gate Charge25 nC
Product TypeMOSFET
MXHTS85412999
SeriesTK290P65Y
Channel ModeEnhancement
Unit Weight0.012699 oz
Fall Time8.5 ns
CNHTS8541290000
Pd - Power Dissipation100 W
Vds - Drain-Source Breakdown Voltage650 V
Number of Channels1 Channel
Rise Time25 ns