参数项参数值
参数项参数值
TechnologySi
ConfigurationSingle
Id - Continuous Drain Current110 A
Transistor PolarityN-Channel
Vgs th - Gate-Source Threshold Voltage4 V
Rds On - Drain-Source Resistance7 mOhms
Vgs - Gate-Source Voltage- 20 V, + 20 V
Minimum Operating Temperature- 55 C
CAHTS8541290000
MXHTS85412101
Maximum Operating Temperature+ 175 C
KRHTS8541299000
Qg - Gate Charge60 nC
Mounting StyleThrough Hole
JPHTS8541290100
Package / CaseTO-220-3
Channel ModeEnhancement
ProductPower MOSFETs
CNHTS8541210000
PackagingTube
TARIC8541210000
Unit Weight0.011640 oz
ImageSTMicroelectronics STP110N10F7
SeriesSTP110N10F7
Factory Pack Quantity1000
Product TypeMOSFET
Pd - Power Dissipation150 W
BrandSTMicroelectronics
ManufacturerSTMicroelectronics
SubcategoryMOSFETs
Product CategoryMOSFET
DescriptionMOSFET N-Ch 100V 6mOhm 110A STripFET VII
Vds - Drain-Source Breakdown Voltage100 V
USHTS8541290095
TradenameSTripFET
Number of Channels1 Channel