参数项参数值
参数项参数值
ConfigurationSingle
Id - Continuous Drain Current10 A
Transistor PolarityN-Channel
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
Rds On - Drain-Source Resistance750 mOhms
Typical Turn-Off Delay Time80 ns
Vgs - Gate-Source Voltage- 30 V, + 30 V
Typical Turn-On Delay Time45 ns
Package / CaseTO-220-3
SeriesTK750A60F
MXHTS85412999
ManufacturerToshiba
Product CategoryMOSFET
Unit Weight0.059966 oz
Qg - Gate Charge30 nC
Mounting StyleThrough Hole
PackagingTube
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
BrandToshiba
RoHS Details
CNHTS8541290000
Product TypeMOSFET
TARIC8541290000
SubcategoryMOSFETs
ImageToshiba TK750A60F,S4X
DescriptionMOSFET N-Ch TT-MOSIX 600V 40W 1130pF 10A
Factory Pack Quantity50
Fall Time20 ns
USHTS8541290095
Pd - Power Dissipation40 W
TradenameMOSIX
Vds - Drain-Source Breakdown Voltage600 V
Number of Channels1 Channel
Rise Time22 ns