参数项参数值
参数项参数值
Gain Bandwidth Product fT3 MHz
Collector- Base Voltage VCBO80 V
ConfigurationSingle
Maximum DC Collector Current4 A
Collector- Emitter Voltage VCEO Max80 V
Continuous Collector Current4 A
Transistor PolarityNPN
TechnologySi
Emitter- Base Voltage VEBO5 V
Width2.66 mm
Height11.04 mm
Collector-Emitter Saturation Voltage0.8 V
DC Collector/Base Gain hfe Min15
Length7.74 mm
Mounting StyleThrough Hole
MXHTS85412999
CNHTS8541290000
Factory Pack Quantity500
BrandON Semiconductor
KRHTS8541299000
Unit Weight0.023986 oz
SubcategoryTransistors
Package / CaseTO-225-3
CAHTS8541290000
JPHTS8541290100
PackagingBulk
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
SeriesBD441
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT 4A 80V 36W NPN
ManufacturerON Semiconductor
ImageON Semiconductor BD441G
TARIC8541290000
Product CategoryBipolar Transistors - BJT
RoHS Details
Pd - Power Dissipation36 W
USHTS8541290095