参数项参数值
参数项参数值
ConfigurationSingle
Id - Continuous Drain Current50 A
Transistor PolarityP-Channel
TechnologySi
Rds On - Drain-Source Resistance21.3 mOhms
Package / CasePowerPAK-1212-8
Length3.3 mm
Minimum Operating Temperature- 55 C
Height1.04 mm
CAHTS8541290000
Vgs - Gate-Source Voltage- 25 V, + 25 V
ManufacturerVishay
JPHTS8541290100
BrandVishay / Siliconix
SubcategoryMOSFETs
KRHTS8541299000
PackagingCut Tape
PackagingMouseReel
PackagingReel
Factory Pack Quantity3000
DescriptionMOSFET -30V Vds 25V Vgs PowerPAK 1212-8
Product TypeMOSFET
Maximum Operating Temperature+ 150 C
USHTS8541290095
TARIC8541290000
Mounting StyleSMD/SMT
Width3.3 mm
RoHS Details
ImageVishay / Siliconix SIS427EDN-T1-GE3
Qg - Gate Charge66 nC
MXHTS85412999
Product CategoryMOSFET
SeriesSIS
Channel ModeEnhancement
Unit Weight0.023986 oz
CNHTS8541290000
Pd - Power Dissipation52 W
TradenameTrenchFET, PowerPAK
Number of Channels1 Channel