SCT20N120

SCT20N120

厂牌：ST(意法半导体)

包装：TUBE 1

类目：元器件 > 分立器件 > MOSFET

编号：B000053359389

描述：N-Channel 1200 V 290 mΩ 20 A Flange Mount Silicon Carbide Power Mosfet - HiP247™

商品参数

参数项参数值

参数项参数值

KRHTS8541299000

ConfigurationSingle

Minimum Operating Temperature- 55 C

Transistor PolarityN-Channel

TechnologySiC

Vgs th - Gate-Source Threshold Voltage2 V

Transistor Type1 N-Channel Power MOSFET

Typical Turn-Off Delay Time27 ns

Vgs - Gate-Source Voltage- 20 V, + 20 V

SubcategoryMOSFETs

Product CategoryMOSFET

JPHTS8541290100

Package / CaseHiP-247-3

DescriptionMOSFET 1200V silicon carbide MOSFET

ManufacturerSTMicroelectronics

RoHS Details

Factory Pack Quantity600

Typical Turn-On Delay Time10 ns

ImageSTMicroelectronics SCT20N120

MXHTS85412999

CAHTS8541290000

Maximum Operating Temperature+ 200 C

TARIC8541290000

BrandSTMicroelectronics

PackagingTube

Mounting StyleThrough Hole

Qg - Gate Charge45 nC

SeriesSCT20N120

TradenameHiP247

Product TypeMOSFET

Channel ModeEnhancement

USHTS8541290095

Unit Weight1.340411 oz

Fall Time17 ns

CNHTS8541290000

Pd - Power Dissipation175 W

Vds - Drain-Source Breakdown Voltage1.2 kV

Number of Channels1 Channel

Rise Time16 ns