参数项参数值
参数项参数值
ConfigurationSingle
Transistor PolarityN-Channel
Id - Continuous Drain Current19.5 A
TechnologySi
Vgs th - Gate-Source Threshold Voltage4 V
Minimum Operating Temperature- 55 C
Rds On - Drain-Source Resistance260 mOhms
Transistor Type1 N-Channel
Maximum Operating Temperature+ 150 C
KRHTS8541299000
Vgs - Gate-Source Voltage- 30 V, + 30 V
ImageSTMicroelectronics STW25N80K5
JPHTS8541290100
ManufacturerSTMicroelectronics
CAHTS8541290000
MXHTS85412999
Package / CaseTO-247-3
BrandSTMicroelectronics
SubcategoryMOSFETs
USHTS8541290095
Mounting StyleThrough Hole
Product CategoryMOSFET
TARIC8541290000
DescriptionMOSFET N-Ch 800V 0.19 Ohm 19.5 A MDmesh K5
PackagingTube
Factory Pack Quantity600
Qg - Gate Charge40 nC
RoHS Details
SeriesSTW25N80K5
TradenameMDmesh
Product TypeMOSFET
Channel ModeEnhancement
Unit Weight1.340411 oz
CNHTS8541290000
Pd - Power Dissipation250 W
Vds - Drain-Source Breakdown Voltage800 V
Number of Channels1 Channel