参数项参数值
参数项参数值
TechnologySi
ConfigurationSingle
Id - Continuous Drain Current200 mA
Transistor PolarityP-Channel
Vgs th - Gate-Source Threshold Voltage3.5 V
Rds On - Drain-Source Resistance1.3 Ohms
Vgs - Gate-Source Voltage- 20 V, + 20 V
Height1.1 mm
Width1.5 mm
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CAHTS8541210000
MXHTS85412101
Length2.9 mm
KRHTS8541219000
Package / CaseSOT-346-3
JPHTS8541210101
Channel ModeEnhancement
Mounting StyleSMD/SMT
CNHTS8541210000
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541210000
RoHS Details
Unit Weight0.000423 oz
ImageToshiba 2SJ168TE85LF
BrandToshiba
Series2SJ168
Factory Pack Quantity3000
Pd - Power Dissipation200 mW
Product CategoryMOSFET
Product TypeMOSFET
TypeRF Small Signal MOSFET
ManufacturerToshiba
SubcategoryMOSFETs
DescriptionMOSFET P-Ch Sm Sig FET Id -0.2A -60V 20V
Vds - Drain-Source Breakdown Voltage60 V
USHTS8541210095
Number of Channels1 Channel