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FDMT80080DC
厂牌：ON(安森美)
包装：REEL 1
类目：元器件 > 分立器件 > MOSFET
编号：B000053359475
描述：Trans MOSFET N-CH Si 80V 36A 8-Pin QFN EP T/R
商品参数
参数项参数值
参数项参数值
ConfigurationDual
Forward Transconductance - Min116 S
Id - Continuous Drain Current36 A
Transistor PolarityN-Channel
Vgs th - Gate-Source Threshold Voltage3.1 V
TechnologySi
Rds On - Drain-Source Resistance1.06 mOhms
Transistor Type2 N-Channel
Width3.3 mm
Height0.8 mm
Length3.3 mm
Vgs - Gate-Source Voltage- 20 V, + 20 V
KRHTS8541299000
Typical Turn-On Delay Time67 ns
Package / CasePower-33-8
SeriesFDMT80080DC
MXHTS85412999
ManufacturerON Semiconductor
Unit Weight0.008766 oz
Qg - Gate Charge195 nC
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
RoHS Details
BrandON Semiconductor / Fairchild
CNHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
Product CategoryMOSFET
Product TypeMOSFET
TARIC8541290000
SubcategoryMOSFETs
ImageON Semiconductor / Fairchild FDMT80080DC
DescriptionMOSFET 80V N ch Dual Cool Power Trench MOSFET
Factory Pack Quantity3000
Fall Time30 ns
USHTS8541290095
TradenamePowerTrench
Vds - Drain-Source Breakdown Voltage80 V
Number of Channels2 Channel
Rise Time65 ns